 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJW21192/D Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. * * * * DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms TO-247AE Package MJW21192 MJW21191 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS NPN PNP C, CAPACITANCE (pF) II II IIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III II IIIIIIIIIIIIIIIIIIIIIII III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB PD MJW21191 MJW21192 150 150 5.0 8.0 16 2.0 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous -- Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 100 0.65 Watts W/_C TJ, Tstg - 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol RJC RJA Max 50 Unit Thermal Resistance, Junction to Case 0.65 _C/W _C/W CASE 340K-01 TO-247AE Thermal Resistance, Junction to Ambient 1000 PNP 100 NPN 10 1.0 1.0 10 100 1000 VR, REVERSE VOLTAGE (V) Figure 1. Typical Capacitance @ 25C (c) Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data 1 III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJW21192 MJW21191 (1) Pulse Test: Pulse Width (2) fT = hfe* ftest. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Current Gain -- Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 8.0 Adc, IB = 1.6 Adc) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) Collector-Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) 2 0.01 TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 1.0 0.00001 D = 0.5 0.05 0.01 0.02 0.1 0.2 0.0001 v 300 s, Duty Cycle v 2.0%. Characteristic 0.001 Figure 2. Thermal Response 0.01 0.1 t, TIME (s) Motorola Bipolar Power Transistor Device Data 1.0 VCEO(sus) VCE(sat) VBE(on) Symbol IEBO ICES hFE fT 10 Min 150 15 5.0 4.0 -- -- -- -- -- t1 ZJC(t) = r(t) RJC RJC = 1.65C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) t2 DUTY CYCLE, P(pk) D = t1/t2 Max 2.0 1.0 2.0 10 10 -- -- -- -- Adc Adc MHz Unit Vdc Vdc Vdc -- 100 100 1000 MJW21192 MJW21191 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. NPN -- MJW21192 100 IC, COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 10 ms 100 ms 10 250 ms 100 PNP -- MJW21191 10 ms 100 ms 10 250 ms 1.0 1.0 0.1 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0.1 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 3. NPN -- MJW21192 Safe Operating Area Figure 4. PNP -- MJW21191 Safe Operating Area TYPICAL CHARACTERISTICS NPN -- MJW21192 1000 1000 50C 100 100C 25C h FE , DC CURRENT GAIN h FE, DC CURRENT GAIN 50C 100C 100 25C PNP -- MJW21191 10 10 1.0 0.01 0.1 10 1.0 IC, COLLECTOR CURRENT (AMPS) 100 1.0 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) Figure 5. NPN -- MJW21192 VCE = 2.0 V DC Current Gain Figure 6. PNP -- MJW21191 VCE = 2.0 V DC Current Gain Motorola Bipolar Power Transistor Device Data 3 MJW21192 MJW21191 NPN -- MJW21192 1000 1000 50C h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 50C 100 100C 25C 100C 100 25C PNP -- MJW21191 10 10 1.0 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) 1.0 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) Figure 7. NPN -- MJW21192 VCE = 5.0 V DC Current Gain 1.0 1.0 Figure 8. PNP -- MJW21191 VCE = 5.0 V DC Current Gain V, VOLTAGE (VOLTS) 25C 0.1 V, VOLTAGE (VOLTS) 100C 0.1 100C 25C 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 9. NPN -- MJW21192 VCE(sat) IC/IB = 5.0 1.0 100C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 25C 0.1 1.0 10 Figure 10. PNP -- MJW21191 VCE(sat) IC/IB = 5.0 0.1 100C 25C 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 11. NPN -- MJW21192 VCE(sat) IC/IB = 10 SPACE Figure 12. PNP -- MJW21191 VCE(sat) IC/IB = 10 4 Motorola Bipolar Power Transistor Device Data MJW21192 MJW21191 NPN -- MJW21192 10 10 PNP -- MJW21191 V, VOLTAGE (VOLTS) 1.0 25C 100C V, VOLTAGE (VOLTS) 50C 1.0 25C 50C 100C 0.1 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 13. NPN -- MJW21192 VCE = 2.0 V VBE(on) Curve SPACE Figure 14. PNP -- MJW21191 VCE = 2.0 V VBE(on) Curve Motorola Bipolar Power Transistor Device Data 5 MJW21192 MJW21191 PACKAGE DIMENSIONS 0.25 (0.010) M -Q- TBM -T- E -B- U L R 1 2 3 C 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 A K P -Y- V F D 0.25 (0.010) M H J G DIM A B C D E F G H J K L P Q R U V YQ S CASE 340K-03 (TO-247AE) ISSUE A 6 Motorola Bipolar Power Transistor Device Data MJW21192 MJW21191 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola Bipolar Power Transistor Device Data 7 MJW21192 MJW21191 Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 8 Motorola Bipolar Power Transistor Device Data MJW21192/D |
Price & Availability of MJW21191
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |